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- دیتاشیت VN2210N2
VN2210N2 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | VN2210N2 |
|---|---|
| حجم فایل | 63.579 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 14 |
دانلود دیتاشیت VN2210N2 |
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سایر مستندات
VN2210 Datasheet 14 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Microchip Tech VN2210N2
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 360mW
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 500pF@25V
- Continuous Drain Current (Id): 1.7A
- Gate Threshold Voltage (Vgs(th)@Id): 2.4V@10mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 350mΩ@4A,10V
- Package: TO-39
- Manufacturer: Microchip Tech
- Series: -
- Packaging: Bulk
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 10mA
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 360mW (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-39
- Package / Case: TO-205AD, TO-39-3 Metal Can
- detail: N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39